A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

A chip package may include a first polymer layer and a first semiconductor chip in the first polymer layer. The first semiconductor chip may include a first semiconductor device and a first semiconductor substrate supporting the first semiconductor device. The first semiconductor chip may also have a first contact pad coupled to the first semiconductor device. The first semiconductor chip may further include a first conductive interconnect on the first contact pad. The chip package may also include a second polymer layer on the first polymer layer and across an edge of the first semiconductor chip. The chip package may further include a first conductive layer in the second polymer layer and directly on a surface of the first conductive interconnect, and across the edge of the first semiconductor chip.

Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bump structure overlying a bond pad. The bond pad is disposed over a semiconductor substrate. An etch stop layer overlies the bond pad. A buffer layer is disposed over the bond pad and separates the etch stop layer and the bond pad. The bump structure includes a base portion contacting an upper surface of the bond pad and an upper portion extending through the etch stop layer and the buffer layer. The base portion of the bump structure has a first width or diameter and the upper portion of the bump structure has a second width or diameter. The first width or diameter being greater than the second width or diameter.

It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

A method of joining a surface-mount component to a substrate includes placing a piece of solder on top of the substrate and temporarily bonding the piece of solder to the substrate with at least one temporary bond. The method also includes placing a surface-mount component on top of the substrate with a bottom face of the surface-mount component facing the substrate. The surface-mount component has at least one lateral side. The method further includes positioning the surface-mount component with the at least one lateral side proximate the piece of solder, heating the substrate and the piece of solder to a joining temperature for a time sufficient for the solder to flow into an area between the bottom face of the surface-mount component and the substrate, and cooling the substrate and solder.

A method of joining a surface-mount component to a substrate includes placing a piece of solder on top of the substrate and temporarily bonding the piece of solder to the substrate with at least one temporary bond. The method also includes placing a surface-mount component on top of the substrate with a bottom face of the surface-mount component facing the substrate. The surface-mount component has at least one lateral side. The method further includes positioning the surface-mount component with the at least one lateral side proximate the piece of solder, heating the substrate and the piece of solder to a joining temperature for a time sufficient for the solder to flow into an area between the bottom face of the surface-mount component and the substrate, and cooling the substrate and solder.

It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.