A bond pad structure includes a first oxide layer that overlies a substrate. A plurality of adhesion structures are formed over the first oxide layer. A second oxide layer is formed over the plurality of adhesion structures and the first oxide layer. Each one of a plurality of contact openings formed within a surface region of the second oxide layer includes one or more sides and is aligned over at least a portion of a top surface of a corresponding one of the plurality of adhesion structures. A barrier layer is formed within the surface region that is over the second oxide layer and within the plurality of contact openings and over the at least a portion of the top surface of the corresponding ones of the plurality of adhesion structures. A metal layer is formed over the barrier layer.

A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

A camera module is configured to capture an optical image of a target area and includes a lens member, an imager, a light transmitting member, and a seat. The lens member is configured to receive light from the target area. The imager has a curved portion convex in a direction away from the lens member and is configured to capture the optical image formed on the curved portion. The light transmitting member optically couples the lens member and the imager. The seat has a supporting portion that supports an outer rim of the imager and a fluid space defined inside the supporting portion. A heat dissipation fluid undergoes convection in the fluid space. The curved portion is interposed between the light transmitting member and the seat having the supporting portion and the fluid space.

A method for assembling components implementing includes a pre-treatment of the solder bumps allowing an assembly by fluxless and residue-free soldering. A first component carrying solder bumps is assembled with a second component carrying connectors. Beforehand, a pre-treatment of the components carrying solder bumps is carried out by contacting them with a pre-treatment liquid which makes their subsequent fluxless and residue-free soldering possible.

A method for assembling components implementing includes a pre-treatment of the solder bumps allowing an assembly by fluxless and residue-free soldering. A first component carrying solder bumps is assembled with a second component carrying connectors. Beforehand, a pre-treatment of the components carrying solder bumps is carried out by contacting them with a pre-treatment liquid which makes their subsequent fluxless and residue-free soldering possible.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.