A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

Semiconductor die stacks, and associated methods and systems are disclosed. The semiconductor die stack may include a first die with a memory array and a second die with CMOS circuitry configured to access the memory array. The first die may not have circuitry for accessing the memory array. Further, the first and second dies may be bonded to function as a single memory device, and front surfaces of the first and second dies are conjoined to form electrical connections therebetween. The second die may include a portion uncovered by the first die, where bond pads of the semiconductor die stack are located. The first die may provide a space for bond wires to connect to the bond pads without interfering with another die attached above the semiconductor die stack. Multiple semiconductor die stacks may be stacked on top of and in line with each other.

A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.