This invention relates to a curable adhesive composition. In particular, the present invention relates to a curable adhesive composition for die attach, which eliminates the void issue, minimizes the fillet, and has lower bond line thickness and tilt trend, when cured.

This invention relates to a curable adhesive composition. In particular, the present invention relates to a curable adhesive composition for die attach, which eliminates the void issue, minimizes the fillet, and has lower bond line thickness and tilt trend, when cured.

A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.

A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.