Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.

A method for making an interconnect structure includes applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact and the first metal layer is located on a surface of the I/O contact; applying a removable layer to the electronic device. The removable layer is adjacent to the first metal layer. An adhesive layer is applied to the electronic device or to a base insulative layer. The electronic device is secured to the base insulative layer using the adhesive layer. The first metal layer and removable layer are disposed between the electronic device and the base insulative layer.

An inter-substrate bond structure includes an adhesion layer that attached to a first substrate, and an outer gas-permeable layer coupled to the adhesion layer. The outer gas-permeable layer expands and fractures in response to absorbing a gas. The inter-substrate bond structure includes an outer bond layer coupled to the outer gas-permeable layer. The outer bond layer forms an initial thermocompression bond with a mating layer on a second substrate. The initial thermocompression bond bonds the first substrate to the second substrate with the inter-substrate bond structure. The fracture in the inter-substrate bond structure debonds the first substrate from the second substrate while leaving a first portion of the inter-substrate bond structure attached to the first substrate.

In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film. Respective wires are electrically connected to the first and second surface-metal-layers. The semiconductor chip and the respective wires are then sealed with a resin.

A reversable attachment system includes an adhesion layer, an inter-substrate bond structure, a mating layer and an extension actuator. The adhesion layer is configured to attach to a first substrate. The inter-substrate bond structure is coupled to the adhesion layer. The mating layer is configured to attach to a second substrate. The extension actuator is configured to attach to the second substrate and expand in response to an absorption of a gas. The inter-substrate bond structure is configured to form an initial thermocompression bond with the mating layer in response to an applied pressure and an applied heat. The expansion of the extension actuator in response to absorbing the gas detaches the inter-substrate bond structure from the mating layer.