A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

A chip structure includes a substrate, a bottom conductive layer, a semiconductor layer, an interlayer dielectric layer, at least one electrode, and at least one top electrode. The substrate includes in order a core layer and a composite material. The bottom conductive layer is disposed on the bottom surface of the core layer, the semiconductor layer is disposed on the substrate, and an interlayer dielectric layer is disposed on the semiconductor layer. The at least one electrode is disposed between the semiconductor layer and the interlayer dielectric layer, and the at least one top electrode is disposed on the interlayer dielectric layer and electrically coupled to the at least one electrode.

A chip structure includes a substrate, a bottom conductive layer, a semiconductor layer, an interlayer dielectric layer, at least one electrode, and at least one top electrode. The substrate includes in order a core layer and a composite material. The bottom conductive layer is disposed on the bottom surface of the core layer, the semiconductor layer is disposed on the substrate, and an interlayer dielectric layer is disposed on the semiconductor layer. The at least one electrode is disposed between the semiconductor layer and the interlayer dielectric layer, and the at least one top electrode is disposed on the interlayer dielectric layer and electrically coupled to the at least one electrode.

Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also includes a conductive interconnect extending at least partially through the semiconductor substrate. The first metallization layer is in electrical contact with the conductive interconnect via the second metallization layer.