A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

The bonding wire being a Pd-coated copper bonding wire includes: a copper core material; and a Pd layer and containing a sulfur group element, in which with respect to the total of copper, Pd, and the sulfur group element, a concentration of Pd is 1.0 mass % to 4.0 mass % and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of S is 5 mass ppm to 2 mass ppm, a concentration of Se is 5 mass ppm to 20 mass ppm, or a concentration of Te is 15 mass ppm to 50 mass ppm or less. A wire bonding structure includes a Pd-concentrated region with the concentration of Pd being 2.0 mass % or more relative to the total of Al, copper, and Pd near a bonding surface of an Al-containing electrode of a semiconductor chip and a ball bonding portion.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.