A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is art raged between the core material and the surface layer.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is art raged between the core material and the surface layer.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d, the thickness d (nm) of the coating layer is 10?d?130, a ratio of a concentration C.sub.Ni (mass %) of Ni to a concentration C.sub.Pd (mass %) of Pd relative to the entire wire is 0.02<C.sub.Ni/C.sub.Pd?0.7, and a position indicating a maximum concentration of Ni which is 10 atomic % or more, is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio C.sub.Ni/C.sub.Pd of a concentration C.sub.Ni (mass %) of Ni to a concentration C.sub.Pd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more, and at least one of the following conditions (i) and (ii) is satisfied: (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration C.sub.Au (mass %) of Au to a concentration C.sub.Ni (mass %) of Ni relative to the entire wire is 0.02<C.sub.Au/C.sub.Ni?0.7, and a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less.

A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration C.sub.Pd (atomic %) and an Ni concentration C.sub.Ni (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of C.sub.Pd to C.sub.Ni for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration C.sub.Au at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

A solder joint layer has a structure in which plural fine-grained second crystal sections (22) precipitate at crystal grain boundaries between first crystal sections (21) dispersed in a matrix. The first crystal sections (21) are Sn crystal grains containing tin and antimony in a predetermined proportion. The second crystal sections (22) are made up of a first portion containing a predetermined proportion of Ag atoms with respect to Sn atoms, or a second portion containing a predetermined proportion of Cu atoms with respect to Sn atoms, or both. The solder joint layer may have third crystal sections (23) which are crystal grains that contain a predetermined proportion of Sb atoms with respect to Sn atoms. As a result, solder joining is enabled at a low melting point, and a highly reliable solder joint layer having a substantially uniform metal structure can be formed.

A solder joint layer has a structure in which plural fine-grained second crystal sections (22) precipitate at crystal grain boundaries between first crystal sections (21) dispersed in a matrix. The first crystal sections (21) are Sn crystal grains containing tin and antimony in a predetermined proportion. The second crystal sections (22) are made up of a first portion containing a predetermined proportion of Ag atoms with respect to Sn atoms, or a second portion containing a predetermined proportion of Cu atoms with respect to Sn atoms, or both. The solder joint layer may have third crystal sections (23) which are crystal grains that contain a predetermined proportion of Sb atoms with respect to Sn atoms. As a result, solder joining is enabled at a low melting point, and a highly reliable solder joint layer having a substantially uniform metal structure can be formed.