An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.

There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

A semiconductor device includes a first substrate, a first insulating film provided on the first substrate, and a first plug provided in the first insulating film. The device further includes a first layer provided on the first insulating film and a first metal layer provided on the first plug in the first layer and electrically connected to the first plug. The device further includes a second metal layer including a first portion provided in the first layer and a second portion provided on the first layer and electrically connected to the first metal layer.

A semiconductor device includes a first substrate, a first insulating film provided on the first substrate, and a first plug provided in the first insulating film. The device further includes a first layer provided on the first insulating film and a first metal layer provided on the first plug in the first layer and electrically connected to the first plug. The device further includes a second metal layer including a first portion provided in the first layer and a second portion provided on the first layer and electrically connected to the first metal layer.

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy

[00001]$0.05\le \text{x}1\le 3.0,\text{and}$

[00002]$15\le \text{x}2\le 700$

where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy

[00001]$0.05\le \text{x}1\le 3.0,\text{and}$

[00002]$15\le \text{x}2\le 700$

where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.

An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat dissipation device in thermal contact with the integrated circuit device, wherein a first portion of the heat dissipation device extends into the substrate and wherein a second portion of the heat dissipation device extends over the substrate. In one embodiment, the heat dissipation device may comprise the first portion of the heat dissipation device formed from metallization within the substrate.