Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

Disclosed is an electromagnetic wave absorbing heat conductive sheet having superior heat conductivity and electromagnetic wave absorbency. The electromagnetic wave absorbing heat conductive sheet comprises a polymer matrix component; a magnetic metal power; and a fibrous heat conductive filler oriented in one direction.

Disclosed is an electromagnetic wave absorbing heat conductive sheet having superior heat conductivity and electromagnetic wave absorbency. The electromagnetic wave absorbing heat conductive sheet comprises a polymer matrix component; a magnetic metal power; and a fibrous heat conductive filler oriented in one direction.

Disclosed herein are electrically conductive and hermetic vias disposed within an insulator substrate of a feedthrough assembly and methods for making and using the same. Such aspects of the present invention consequently provide for the miniaturization of feedthrough assemblies inasmuch as the feedthrough components of the present invention are capable of supporting very small and hermetic conductively filled via holes in the absence of additional components, such as, for example, terminal pins, leadwires, and the like.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.