Patent classifications
H01L2924/01045
Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof
A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.
PALLADIUM-COATED COPPER BONDING WIRE AND METHOD FOR MANUFACTURING SAME
There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.
PALLADIUM-COATED COPPER BONDING WIRE AND METHOD FOR MANUFACTURING SAME
There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.
Semiconductor device and method of forming the same
A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.
Semiconductor device and method of forming the same
A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.
Coated wire
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core includes: (a) pure silver consisting of silver and further components; or (b) doped silver consisting of silver, at least one doping element, and further components; or (c) a silver alloy consisting of silver, palladium and further components; or (d) a silver alloy consisting of silver, palladium, gold, and further components; or (e) a doped silver alloy consisting of silver, palladium, gold, at least one doping element, and further components, wherein the individual amount of any further component is less than 30 wt.-ppm and the individual amount of any doping element is at least 30 wt.-ppm, and the coating layer is a single-layer of gold or palladium or a double-layer comprised of an inner layer of nickel or palladium and an adjacent outer layer of gold.
Coated wire
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core includes: (a) pure silver consisting of silver and further components; or (b) doped silver consisting of silver, at least one doping element, and further components; or (c) a silver alloy consisting of silver, palladium and further components; or (d) a silver alloy consisting of silver, palladium, gold, and further components; or (e) a doped silver alloy consisting of silver, palladium, gold, at least one doping element, and further components, wherein the individual amount of any further component is less than 30 wt.-ppm and the individual amount of any doping element is at least 30 wt.-ppm, and the coating layer is a single-layer of gold or palladium or a double-layer comprised of an inner layer of nickel or palladium and an adjacent outer layer of gold.
Structure containing Sn layer or Sn alloy layer
A structure containing a Sn layer or a Sn alloy layer includes a substrate, a Sn layer or Sn alloy layer formed above the substrate, and an under barrier metal formed between the substrate and the Sn layer or Sn alloy layer in the form of a single metal layer containing any one of Fe, Co, Ru and Pd, or an alloy layer containing two or more of Fe, Co, Ru and Pd.
Structure containing Sn layer or Sn alloy layer
A structure containing a Sn layer or a Sn alloy layer includes a substrate, a Sn layer or Sn alloy layer formed above the substrate, and an under barrier metal formed between the substrate and the Sn layer or Sn alloy layer in the form of a single metal layer containing any one of Fe, Co, Ru and Pd, or an alloy layer containing two or more of Fe, Co, Ru and Pd.
STRUCTURE CONTAINING SN LAYER OR SN ALLOY LAYER
A structure containing a Sn layer or a Sn alloy layer includes a substrate, a Sn layer or Sn alloy layer formed above the substrate, and an under barrier metal formed between the substrate and the Sn layer or Sn alloy layer in the form of a single metal layer containing any one of Fe, Co, Ru and Pd, or an alloy layer containing two or more of Fe, Co, Ru and Pd.