A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound body 1 according to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding core 2 into a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material 11; and a sheet for sintering bonding 10, comprising an electrically conductive metal containing sinterable particle and a binder component.

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound body 1 according to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding core 2 into a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material 11; and a sheet for sintering bonding 10, comprising an electrically conductive metal containing sinterable particle and a binder component.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.

A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.