H01L2924/01047

Semiconductor device and method for production of semiconductor device
11715752 · 2023-08-01 · ·

A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

ELECTRICAL, MECHANICAL, COMPUTING, AND/OR OTHER DEVICES FORMED OF EXTREMELY LOW RESISTANCE MATERIALS

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

ELECTRICAL, MECHANICAL, COMPUTING, AND/OR OTHER DEVICES FORMED OF EXTREMELY LOW RESISTANCE MATERIALS

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

DISPLAY DEVICE
20230028194 · 2023-01-26 ·

A display device includes: a substrate; a plurality of pixel columns on the substrate, each of the plurality of pixel columns including a plurality of pixel groups each including a first pixel and a second pixel arranged along a first direction; and a bank enclosing a perimeter of each of the plurality of pixel groups, the bank including a first opening corresponding to each of the plurality of pixel groups, and a second opening located between two pixel groups adjacent to each other in the first direction among the plurality of pixel groups.

ELECTRO-OXIDATIVE METAL REMOVAL ACCOMPANIED BY PARTICLE CONTAMINATION MITIGATION IN SEMICONDUCTOR PROCESSING

During electro-oxidative metal removal on a semiconductor substrate, the substrate having a metal layer is anodically biased and the metal is electrochemically dissolved into an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) can inadvertently form on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. Contamination with such particles can be mitigated by preventing particle formation and/or by dissolution of particles. In one implementation, mitigation involves using an electrolyte that includes an oxidizer, such as hydrogen peroxide, during the electrochemical metal removal. An electrochemical metal removal apparatus in one embodiment has a conduit for introducing an oxidizer to the electrolyte and a sensor for monitoring the concentration of the oxidizer in the electrolyte.

ELECTRO-OXIDATIVE METAL REMOVAL ACCOMPANIED BY PARTICLE CONTAMINATION MITIGATION IN SEMICONDUCTOR PROCESSING

During electro-oxidative metal removal on a semiconductor substrate, the substrate having a metal layer is anodically biased and the metal is electrochemically dissolved into an electrolyte. Metal particles (e.g., copper particles when the dissolved metal is copper) can inadvertently form on the surface of the substrate during electrochemical metal removal and cause defects during subsequent semiconductor processing. Contamination with such particles can be mitigated by preventing particle formation and/or by dissolution of particles. In one implementation, mitigation involves using an electrolyte that includes an oxidizer, such as hydrogen peroxide, during the electrochemical metal removal. An electrochemical metal removal apparatus in one embodiment has a conduit for introducing an oxidizer to the electrolyte and a sensor for monitoring the concentration of the oxidizer in the electrolyte.

Stacked semiconductor die assemblies with partitioned logic and associated systems and methods
11562986 · 2023-01-24 · ·

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

Stacked semiconductor die assemblies with partitioned logic and associated systems and methods
11562986 · 2023-01-24 · ·

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.

Decoupling capacitor mounted on an integrated circuit die, and method of manufacturing the same

Electronic device package technology is disclosed. In one example, an electronic device comprises a die (18) having a bond pad (22); and a decoupling capacitor (14) mounted on the die (18) and electrically coupled to the die (18). A method for making an electronic device comprises mounting a decoupling capacitor (14) on a die (18); and electrically coupling the decoupling capacitor (14) to the die (18).

Decoupling capacitor mounted on an integrated circuit die, and method of manufacturing the same

Electronic device package technology is disclosed. In one example, an electronic device comprises a die (18) having a bond pad (22); and a decoupling capacitor (14) mounted on the die (18) and electrically coupled to the die (18). A method for making an electronic device comprises mounting a decoupling capacitor (14) on a die (18); and electrically coupling the decoupling capacitor (14) to the die (18).