In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

A three-dimensional structure in which a wiring is provided on a surface is provided. At least a part of the surface of the three-dimensional structure includes an insulating layer containing filler. A recessed gutter for wiring is provided on the surface of the three-dimensional structure, and at least a part of a wiring conductor is embedded in the recessed gutter for wiring.

An epoxy resin composition for encapsulating a semiconductor device and a semiconductor device encapsulated by the epoxy resin composition, the composition including a base resin; a filler; a colorant; and a thermochromic pigment, wherein a color of the thermochromic pigment is irreversibly changed when a temperature thereof exceeds a predetermined temperature.

The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

A bonding method can include polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region. After the polishing, a last chemical treatment can be performed on the polished first bonding layer. After performing the last chemical treatment, the first bonding layer of the first element can be directly bonded to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer. No treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

A bonding method can include polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region. After the polishing, a last chemical treatment can be performed on the polished first bonding layer. After performing the last chemical treatment, the first bonding layer of the first element can be directly bonded to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer. No treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.