A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

A filler-containing film that holds fillers and a fine solid in an insulating resin layer and a predetermined arrangement of the fillers is repeated as viewed in a plan view has a proportion of 300% or less where the proportion is a repeat pitch of the fillers after thermocompression bonding to that before thermocompression bonding during thermocompression bonding under a predetermined thermocompression bonding condition with the filler-containing film held between smooth surfaces. A method of producing the filler-containing film includes the steps of: forming an insulating resin layer on a release substrate; pushing fillers from a surface on a side opposite to the release substrate of the insulating resin layer; and layering the insulating resin layer containing the fillers pushed and another insulating resin layer. This filler-containing film suppresses disorder of arrangement of fillers during thermocompression bonding of the film to an article.

A filler-containing film that holds fillers and a fine solid in an insulating resin layer and a predetermined arrangement of the fillers is repeated as viewed in a plan view has a proportion of 300% or less where the proportion is a repeat pitch of the fillers after thermocompression bonding to that before thermocompression bonding during thermocompression bonding under a predetermined thermocompression bonding condition with the filler-containing film held between smooth surfaces. A method of producing the filler-containing film includes the steps of: forming an insulating resin layer on a release substrate; pushing fillers from a surface on a side opposite to the release substrate of the insulating resin layer; and layering the insulating resin layer containing the fillers pushed and another insulating resin layer. This filler-containing film suppresses disorder of arrangement of fillers during thermocompression bonding of the film to an article.

The present disclosure relates to a resin composition for semiconductor adhesion comprising: a thermoplastic resin; a thermosetting resin; a curing agent; and a curing catalyst compound having a specific structure, and an adhesive film for semiconductor, a method for manufacturing a semiconductor package, and a semiconductor package using the same.

The present disclosure relates to a resin composition for semiconductor adhesion comprising: a thermoplastic resin; a thermosetting resin; a curing agent; and a curing catalyst compound having a specific structure, and an adhesive film for semiconductor, a method for manufacturing a semiconductor package, and a semiconductor package using the same.

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.