Embodiments of the present disclosure provide techniques and configurations for a computing system with a thermal interface having magnetic particles. In some embodiments, the computing system may include a first part, a second part, and a thermal interface to couple the first and second parts. The thermal interface may comprise a thermal interface material having magnetic particles that are aligned in a defined direction relative to a surface of the first or second part, to provide desired thermal conductivity between the first and second parts. The defined direction of alignment of magnetic particles may comprise an alignment of the particles substantially perpendicularly to the surface of the first or second part. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure provide techniques and configurations for a computing system with a thermal interface having magnetic particles. In some embodiments, the computing system may include a first part, a second part, and a thermal interface to couple the first and second parts. The thermal interface may comprise a thermal interface material having magnetic particles that are aligned in a defined direction relative to a surface of the first or second part, to provide desired thermal conductivity between the first and second parts. The defined direction of alignment of magnetic particles may comprise an alignment of the particles substantially perpendicularly to the surface of the first or second part. Other embodiments may be described and/or claimed.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

A semiconductor package includes a substrate including an insulating layer and a plurality of first pads on the insulating layer; a semiconductor chip including a plurality of second pads electrically connected to at least a portion of the plurality of first pads, the plurality of second pads overlapping the at least a portion of the plurality of first pads in a first direction; and a plurality of bumps on one surface of the substrate or one surface of the semiconductor chip, each of which has at least a portion having a melting point lower than a melting point of each of the plurality of first pads and a melting point of each of the plurality of second pads, wherein the plurality of bumps include a plurality of first bumps electrically connected to at least a portion of the plurality of first pads or at least a portion of the plurality of second pads, and at least one second bump having a permeability higher than a permeability of each of the plurality of first bumps.