A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming first alignment marks and control circuits in and/or on the first level, where the control circuits include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed on top of the control circuits; performing a first etch step including etching first holes within the second level; and performing additional processing steps (including Atomic Layer Deposition) to form a plurality of memory cells within the second level, where each memory cell includes at least one second transistor, where making the second level includes forming lithography holes atop of the first alignment marks which enables performing lithography steps aligned to the first alignment marks, including at least the first etch step above.

The present application discloses a semiconductor device with graphene layers and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first passivation layer positioned above the substrate, a redistribution layer positioned on the first passivation layer, a first adjustment layer positioned on the redistribution layer, a pad layer positioned on the first adjustment layer, and a second adjustment layer positioned between the pad layer and the first adjustment layer. The first adjustment layer and the second adjustment layer are formed of graphene.

The present application discloses a semiconductor device with graphene layers and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first passivation layer positioned above the substrate, a redistribution layer positioned on the first passivation layer, a first adjustment layer positioned on the redistribution layer, a pad layer positioned on the first adjustment layer, and a second adjustment layer positioned between the pad layer and the first adjustment layer. The first adjustment layer and the second adjustment layer are formed of graphene.

A 3D semiconductor device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where a second metal layer is disposed atop the first metal layer; a plurality of logic gates including the first metal layer and first transistors; a plurality of second transistors disposed atop the second metal layer; a plurality of third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, where the memory array includes at least four memory mini arrays, where each of the mini arrays includes at least two rows by two columns of memory cells, where each memory cell includes one of the second transistors or one of the third transistors, and where one of the second transistors is self-aligned to one of the third transistors, being processed following a same lithography step.

A method including stacking a number of silicon dice such that one or more edges of the dice are in vertical alignment, where the one or more edges include a number of connection pads. The method also includes positioning a connecting wire on a substantially perpendicular axis to the one or more edges. The connecting wire includes a number of solder blocks formed thereon. The solder blocks are spaced at intervals associated with a distance between a first set of aligned connection pads on the dice. The connecting wire is positioned such that the solder blocks are in contact with the first set of aligned connection pads. The method also includes applying heat to cause the solder blocks to reflow and physically and electrically couple the connecting wire to the connection pads.

A 3D semiconductor device, the device including: a first level including a plurality of first single crystal transistors and a first metal layer, where the first transistors include forming memory control circuits; a second level including a plurality of second transistors; a third level including a plurality of third transistors, where the second level is above the first level, and where the third level is above the second level; a second metal layer above the third level; and a third metal layer above the second metal layer, where the second transistors are aligned to the first transistors with less than 140 nm alignment error, where the second level includes a plurality of first memory cells, where the third level includes a plurality of second memory cells, and where the memory control circuits are designed to adjust a memory write voltage according to the device specific process parameters.

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

A method including stacking a number of silicon dice such that one or more edges of the dice are in vertical alignment, where the one or more edges include a number of connection pads. The method also includes positioning a connecting wire on a substantially perpendicular axis to the one or more edges. The connecting wire includes a number of solder blocks formed thereon. The solder blocks are spaced at intervals associated with a distance between a first set of aligned connection pads on the dice. The connecting wire is positioned such that the solder blocks are in contact with the first set of aligned connection pads. The method also includes applying heat to cause the solder blocks to reflow and physically and electrically couple the connecting wire to the connection pads.

The present application discloses a method for fabricating a semiconductor device with graphene layers The method includes providing a substrate; forming a first passivation layer above the substrate; forming a redistribution layer on the first passivation layer; forming a first adjustment layer on the redistribution layer; forming a pad layer on the first adjustment layer; forming a second adjustment layer between the pad layer and the first adjustment layer; forming a second passivation layer on the first passivation layer; wherein the first adjustment layer and the second adjustment layer are formed of graphene.

The present application discloses a method for fabricating a semiconductor device with graphene layers The method includes providing a substrate; forming a first passivation layer above the substrate; forming a redistribution layer on the first passivation layer; forming a first adjustment layer on the redistribution layer; forming a pad layer on the first adjustment layer; forming a second adjustment layer between the pad layer and the first adjustment layer; forming a second passivation layer on the first passivation layer; wherein the first adjustment layer and the second adjustment layer are formed of graphene.