The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad. The solder bump comprises a height from a top of the solder bump to the contact pad; and a width which is a widest dimension of the solder bump in a direction perpendicular to the height. A junction portion of the solder bump in proximity to the contact pad comprises an hourglass shape.

According to one aspect of the present invention, a lead-free solder alloy includes 2% by mass or more and 3.1% by mass or less of Ag, more than 0% by mass and 1% by mass or less of Cu, 1% by mass or more and 5% by mass or less of Sb, 3.1% by mass or more and 4.5% by mass or less of Bi, 0.01% by mass or more and 0.25% by mass or less of Ni, and Sn.

According to one aspect of the present invention, a lead-free solder alloy includes 2% by mass or more and 3.1% by mass or less of Ag, more than 0% by mass and 1% by mass or less of Cu, 1% by mass or more and 5% by mass or less of Sb, 3.1% by mass or more and 4.5% by mass or less of Bi, 0.01% by mass or more and 0.25% by mass or less of Ni, and Sn.

In one example, an electronic device can comprise a substrate, a first passivation structure over the substrate and defining a first opening, and a first conductive pattern formed in the first opening. A second passivation structure can be disposed over the first conductive pattern and the first passivation structure. The second passivation structure can include a high-resolution material and a high-function material. The high-resolution material of the second passivation structure can define a second opening. A second conductive pattern can be disposed in the second opening of the second passivation structure. The high-function material can be disposed between the first conductive pattern and the second conductive pattern. Other examples and related methods are also disclosed herein.