Microelectronic assemblies fabricated using hybrid manufacturing with modified via-last process are disclosed. The fabrication approach is based on using hybrid manufacturing to bond first and second IC structures originally provided on different dies but filling at least portions of vias that are supposed to couple across a bonding interface between the first and second IC structures with electrically conductive materials after the IC structures have been bonded. A resulting microelectronic assembly that includes the first and second IC structures bonded together may have vias extending through all of the first IC structure and into the second IC structure, thus providing electrical coupling between one or more components of the first IC structure and those of the second IC structure, where an electrically conductive material in the individual vias is continuous through the first IC structure and at least a portion of the second IC structure.

A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.

A microelectronic package may include stacked microelectronic dice, wherein a first microelectronic die is attached to a microelectronic substrate, and a second microelectronic die is stacked over at least a portion of the first microelectronic die, wherein the microelectronic substrate includes a plurality of pillars extending therefrom, wherein the second microelectronic die includes a plurality of pillars extending therefrom in a mirror-image configuration to the plurality of microelectronic substrate pillars, and wherein the second microelectronic die pillars are attached to microelectronic substrate pillars with an attachment material.

A microelectronic package may include stacked microelectronic dice, wherein a first microelectronic die is attached to a microelectronic substrate, and a second microelectronic die is stacked over at least a portion of the first microelectronic die, wherein the microelectronic substrate includes a plurality of pillars extending therefrom, wherein the second microelectronic die includes a plurality of pillars extending therefrom in a mirror-image configuration to the plurality of microelectronic substrate pillars, and wherein the second microelectronic die pillars are attached to microelectronic substrate pillars with an attachment material.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.

A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.

A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.