A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

A semiconductor package including a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, and a third semiconductor chip disposed on the second semiconductor chip. A first pad is disposed on a top surface of the second semiconductor chip, and includes a first portion and a second portion protruding in a vertical direction from the first portion. A width of the first portion in a first horizontal direction is greater than a width of the second portion in the first horizontal direction. A second pad is disposed on a bottom surface of the third semiconductor chip facing the top surface of the second semiconductor chip, and a solder ball is disposed as surrounding a sidewall of the second portion of the first pad between the first pad and the second pad.

A semiconductor package including a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, and a third semiconductor chip disposed on the second semiconductor chip. A first pad is disposed on a top surface of the second semiconductor chip, and includes a first portion and a second portion protruding in a vertical direction from the first portion. A width of the first portion in a first horizontal direction is greater than a width of the second portion in the first horizontal direction. A second pad is disposed on a bottom surface of the third semiconductor chip facing the top surface of the second semiconductor chip, and a solder ball is disposed as surrounding a sidewall of the second portion of the first pad between the first pad and the second pad.

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 μm thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.

One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 μm thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.