The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. The second semiconductor structure is positioned on the first connecting structure and includes two second conductive features positioned on the two first conductive layers. The first conductive layer has a first width, the second conductive feature has a second width greater than the first width, and the different width forms a step-shaped cross-sectional profile near an interface of the first conductive layer and the second conductive feature.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. The second semiconductor structure is positioned on the first connecting structure and includes two second conductive features positioned on the two first conductive layers. The first conductive layer has a first width, the second conductive feature has a second width greater than the first width, and the different width forms a step-shaped cross-sectional profile near an interface of the first conductive layer and the second conductive feature.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. The second semiconductor structure is positioned on the first connecting structure and includes two second conductive features positioned on the two first conductive layers. The first conductive layer has a first width, the second conductive feature has a second width greater than the first width, and the different width forms a step-shaped cross-sectional profile near an interface of the first conductive layer and the second conductive feature.

The present disclosure provides a semiconductor device including a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure. The first connecting structure includes a plurality of first connecting contacts and a plurality of first supporting contacts positioned in a first connecting insulating layer. The second connecting structure includes a plurality of second connecting contacts and a plurality of second supporting contacts positioned in the second connecting insulating layer positioned on the first connecting structure. The plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts. The plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts for implementing electro-magnetic interference shielding between the signal-transmitting contacts.

The present disclosure provides a semiconductor device including a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, a second connecting structure positioned on the first connecting structure, and a second semiconductor structure positioned on the second connecting structure. The first connecting structure includes a plurality of first connecting contacts and a plurality of first supporting contacts positioned in a first connecting insulating layer. The second connecting structure includes a plurality of second connecting contacts and a plurality of second supporting contacts positioned in the second connecting insulating layer positioned on the first connecting structure. The plurality of first connecting contacts contact the plurality of second connecting contacts, forming signal-transmitting contacts. The plurality of first supporting contacts contact the plurality of second supporting contacts, forming electrically floating contacts for implementing electro-magnetic interference shielding between the signal-transmitting contacts.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A through-substrate vias structure includes a substrate having opposing first and second major surfaces. One or more conductive via structures are disposed extending from the first major surface to a first vertical distance within the substrate. A recessed region extends from the second major surface to a second vertical distance within the substrate and adjoining a lower surface of the conductive via. In one embodiment, the second vertical distance is greater than the first vertical distance. A conductive region is disposed within the recessed region and is configured to be in electrical and/or thermal communication with the conductive via.