The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

After a die bonding step, a wire bonding step is performed to electrically connect the plurality of pad electrodes and the plurality of leads of the semiconductor chip via a plurality of copper wires. A plating layer is formed on a surface of the lead, and a copper wire is connected to the plating layer in the wire bonding step. The plating layer is a silver plating layer. After the die bonding step, an oxygen plasma treatment is performed on the lead frame and the semiconductor chip before the wire bonding step, and then the surface of the plating layer is reduced.

After a die bonding step, a wire bonding step is performed to electrically connect the plurality of pad electrodes and the plurality of leads of the semiconductor chip via a plurality of copper wires. A plating layer is formed on a surface of the lead, and a copper wire is connected to the plating layer in the wire bonding step. The plating layer is a silver plating layer. After the die bonding step, an oxygen plasma treatment is performed on the lead frame and the semiconductor chip before the wire bonding step, and then the surface of the plating layer is reduced.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.

Wafers include a contact pad on a surface of a bulk redistribution layer. A final redistribution layer is formed on the surface and in contact with the contact pad. Solder is formed on the contact pad. The solder includes a pedestal portion formed to a same height as the final redistribution layer and a ball portion above the pedestal portion.