A bonding wire for a high-speed signal line for connecting a pad electrode of a semiconductor device and a lead electrode on a circuit board contains palladium (Pd), platinum (Pt), silver (Ag), and a trace additive element.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A round wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the outer layer of gold exhibits at least one of the following intrinsic properties A1) and A2): A1) the average grain size of the crystal grains in the outer layer of gold, measured in longitudinal direction, is in the range of 0.1 to 0.8 m; A2) 60 to 100% of the crystal grains in the outer layer of gold are oriented in <100> direction, and 0 to 20% of the crystal grains in the outer layer of gold are oriented in <111> direction.

A round wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the outer layer of gold exhibits at least one of the following intrinsic properties A1) and A2): A1) the average grain size of the crystal grains in the outer layer of gold, measured in longitudinal direction, is in the range of 0.1 to 0.8 m; A2) 60 to 100% of the crystal grains in the outer layer of gold are oriented in <100> direction, and 0 to 20% of the crystal grains in the outer layer of gold are oriented in <111> direction.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A method produces non-contact dielectric bridges using a transfer machine for positioning an integrated circuit on a conductive circuit and a laser for ensuring the connection of the contacts thereof. The contacts of the integrated circuit that have been registered by a transfer machine in relation to the contacts of the conductive circuit, arranged on a continuous support made of heat- and radiation-resistant polyimide and held under pressure by the device, are welded together using a laser beam. The laser is positioned beneath the continuous support and built into the transfer machine. When the laser is used, the continuous support is immobilized by a stop and go device. The method is designed to increase the productivity of systems used to produce RFID tags, as a result of low investment costs and much faster speeds of connection of the contacts of the integrated circuit and the conductive circuit. The method allows the use of non-contact identification tags to become widespread over many professions.