A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.

An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

A manufacturing method of an electronic-component-mounted module includes a step of forming a laminate of: a ceramic substrate board, a circuit layer made of aluminum or aluminum alloy on the ceramic substrate board, a first silver paste layer between the circuit layer and one surface of an electronic component, the electronic component, a lead frame made of copper or copper alloy, and a second silver paste layer between the other surface of the electronic component and the lead frame; and a step of batch-bonding bonding the circuit layer, the electronic component, and the lead frame at one time by heating the laminate to a heating temperature of not less than 180° C. to 350° C. inclusive with adding a pressure of 1 MPa to 20 MPa inclusive in a laminating direction on the laminate, to sinter the first and second silver paste layers and form first and second silver-sintered bonding layers.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

A connection structure including: a first circuit member having a plurality of first electrodes; a second circuit member having a plurality of second electrodes; and an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, in which at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and 90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.

A display device includes: a circuit substrate including a plurality of pixel circuit units and a plurality of pads on a first surface thereof, the plurality of pads being electrically connected to the pixel circuit units; a display substrate on the circuit substrate and including a plurality of light emitting elements electrically connected to the pixel circuit units; a circuit board on the circuit substrate and including a plurality of circuit board pads electrically connected to the pads; a heat dissipation substrate on a second surface of the circuit substrate, the second surface being opposite to the first surface; and a cover substrate on the heat dissipation substrate and partially overlapping the circuit substrate and the circuit board. Each of the plurality of pads is in direct contact with at least one of the plurality of circuit board pads.

An integrated circuit assembly may be formed using a phase change material as an electromagnetic shield and as a heat dissipation mechanism for the integrated circuit assembly. In one embodiment, the integrated circuit assembly may comprise an integrated circuit package including a first substrate having a first surface and an opposing second surface, and at least one integrated circuit device having a first surface and an opposing second surface, wherein the at least one integrated circuit device is electrically attached by the first surface thereof to the first surface of the first substrate; and a phase change material formed on the integrated circuit package.