A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A bonding method can include polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region. After the polishing, a last chemical treatment can be performed on the polished first bonding layer. After performing the last chemical treatment, the first bonding layer of the first element can be directly bonded to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer. No treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.

A bonding method can include polishing a first bonding layer of a first element for direct bonding, the first bonding layer comprises a first conductive pad and a first non-conductive bonding region. After the polishing, a last chemical treatment can be performed on the polished first bonding layer. After performing the last chemical treatment, the first bonding layer of the first element can be directly bonded to a second bonding layer of a second element without an intervening adhesive, including directly bonding the first conductive pad to a second conductive pad of the second bonding layer and directly bonding the first non-conductive bonding region to a second nonconductive bonding region of the second bonding layer. No treatment or rinse is performed on the first bonding layer between performing the last chemical treatment and directly bonding.