Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed above a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. The first bonding contact is made of a first indiffusible conductive material. A second device layer is formed above a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, such that the first bonding contact is in contact with the second bonding contact at a bonding interface.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact. The second semiconductor structure includes a second device layer and a second bonding layer disposed below the second device layer and including a second bonding contact. The first bonding contact is in contact with the second bonding contact at the bonding interface. At least one of the first bonding contact or the second bonding contact is made of an indiffusible conductive material.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bonding conductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bonding conductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.

Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.

Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.