A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.

A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.

A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.

A first semiconductor structure having a first metallic structure that has a convex outermost surface and a second semiconductor structure having a second metallic structure that has a concave outermost surface are first provided. The first and second metallic structures are provided utilizing liner systems that have an opposite galvanic reaction to the metal or metal alloy that constitutes the first and second metallic structures such that during a planarization process the metal liners have a different removal rate than the metal or metal alloy that constitutes the first and second metallic structures. The first semiconductor structure and the second semiconductor structure are then bonded together such that the convex outermost surface of the first metallic structure is in direct contact with the concave outermost surface of the second metallic structure.

The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A),a polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.

The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A),a polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.