The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.

The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.

Three-dimensional memory devices in the form of a memory die includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack, in which each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Bit lines are electrically connected to an end portion of a respective one of the vertical semiconductor channels. Bump connection via structures contact a top surface of a respective one of the bit lines, in which each of the bump connection via structures has a greater lateral dimension along a lengthwise direction of the bit lines than along a widthwise direction of the bit lines. Metallic bump structures of another semiconductor die contact respective ones of the bump connection via structures to make respective electrical connections between the two dies.

Three-dimensional memory devices in the form of a memory die includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack, in which each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Bit lines are electrically connected to an end portion of a respective one of the vertical semiconductor channels. Bump connection via structures contact a top surface of a respective one of the bit lines, in which each of the bump connection via structures has a greater lateral dimension along a lengthwise direction of the bit lines than along a widthwise direction of the bit lines. Metallic bump structures of another semiconductor die contact respective ones of the bump connection via structures to make respective electrical connections between the two dies.

Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400 C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.

A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400 C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.

The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.

The present disclosure relates to a multi-ring bonding pad, a semiconductor structure having the multi-ring bonding pad, and a method of manufacturing the semiconductor structure. The bonding pad includes an inner ring member, an outer ring member, and multiple bridge members. The inner ring member has a pair of first inner edges opposite to each other, a pair of second inner edges opposite to each other, and multiple third inner edges for connecting the first inner edges to the second inner edges. The outer ring member surrounds the inner ring member and has a pair of first outer edges opposite to each other, a pair of second outer edges opposite to each other, and multiple third outer edges for connecting the first outer edges to the second outer edges. The bridge members are disposed between the inner ring member and the outer ring member for connecting the inner ring member to the outer ring member.