H01L2924/0532

Semiconductor packaging structure and process

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Semiconductor packaging structure and process

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Power module and fabrication method for the same
09773720 · 2017-09-26 · ·

A power module includes: an insulating layer; a first metallic plate disposed on the insulating layer; a first semiconductor chip disposed on the first metallic plate; a first adhesive insulating layer and a second adhesive insulating layer disposed on the first metallic plate; a first metallic land for main electrode wiring disposed on the first adhesive insulating layer; and a first metallic land for signal wiring disposed on the second adhesive insulating layer. There can be provided a power module having reduced cost, reduced warpage of the whole of a substrate, stabilized quality, and improved reliability; and a fabrication method for such a power module.

METHODS AND APPARATUSES FOR HIGH TEMPERATURE BONDING AND BONDED SUBSTRATES HAVING VARIABLE POROSITY DISTRIBUTION FORMED THEREFROM

Methods and systems of bonding substrates include disposing a low melting point material and one or more high melting point materials having a higher melting temperature than a melting temperature of the low melting point material between a first substrate and a second substrate to form a substrate assembly including a contacting surface comprising first and second areas; applying a first force at the first area; and applying heat to form a bond layer between the first and second substrates. A first formed porosity of the bond layer is aligned with the first area of the contacting surface. A second formed porosity of the bond layer is aligned with the second area of the contacting surface to which the first force was not applied, and the first formed porosity is different from the second formed porosity.

METHODS AND APPARATUSES FOR HIGH TEMPERATURE BONDING AND BONDED SUBSTRATES HAVING VARIABLE POROSITY DISTRIBUTION FORMED THEREFROM

Methods and systems of bonding substrates include disposing a low melting point material and one or more high melting point materials having a higher melting temperature than a melting temperature of the low melting point material between a first substrate and a second substrate to form a substrate assembly including a contacting surface comprising first and second areas; applying a first force at the first area; and applying heat to form a bond layer between the first and second substrates. A first formed porosity of the bond layer is aligned with the first area of the contacting surface. A second formed porosity of the bond layer is aligned with the second area of the contacting surface to which the first force was not applied, and the first formed porosity is different from the second formed porosity.

Dielectric and metallic nanowire bond layers

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Dielectric and metallic nanowire bond layers

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

POLYAMIC ACID COMPOSITION FOR PRODUCING POLYIMIDE RESIN WITH SUPERIOR ADHESION AND POLYIMIDE RESIN PRODUCED THEREFROM
20220195119 · 2022-06-23 ·

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

POLYAMIC ACID COMPOSITION FOR PRODUCING POLYIMIDE RESIN WITH SUPERIOR ADHESION AND POLYIMIDE RESIN PRODUCED THEREFROM
20220195119 · 2022-06-23 ·

The present invention provides a polyamic acid composition comprising: a polyamic acid in which a dianhydride monomer comprising a first dianhydride having one benzene ring and a second dianhydride having a benzophenone structure, and a diamine monomer comprising a compound represented by Formula (1) are polymerized; and an organic solvent, wherein the mole ratio of the second dianhydride to the first dianhydride (the mole number of the second dianhydride/the mole number of the first dianhydride) is 0.2 to 1.2.

UNDERFILL FILM FOR SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
20220199430 · 2022-06-23 · ·

An underfill film for semiconductor packages and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film includes an adhesive layer in which a melt viscosity and an onset temperature are adjusted to a predetermined range such that production efficiency may be improved by simplifying packaging process of the semiconductor packages. Also the underfill film and the manufacturing process may improve connection reliability of the package.