In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

The present invention provides a film-shaped firing material 1 including sinterable metal particles 10, and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a tensile elasticity of the film-shaped firing material at 60° C. is in a range of 4.0 to 10.0 MPa, and a breaking elongation thereof at 60° C. is 500% or greater; and a film-shaped firing material with a support sheet including the film-shaped firing material 1 which contains sinterable metal particles and a binder component, and a support sheet 2 which is provided on at least one side of the film-shaped firing material, in which an adhesive force (a2) of the film-shaped firing material to the support sheet is smaller than an adhesive force (a1) of the film-shaped firing material to a semiconductor wafer, the adhesive force (a1) is 0.1 N/25 mm or greater, and the adhesive force (a2) is in a range of 0.1 N/25 mm to 0.5 N/25 mm.

The present invention provides a film-shaped firing material 1 including sinterable metal particles 10, and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a tensile elasticity of the film-shaped firing material at 60° C. is in a range of 4.0 to 10.0 MPa, and a breaking elongation thereof at 60° C. is 500% or greater; and a film-shaped firing material with a support sheet including the film-shaped firing material 1 which contains sinterable metal particles and a binder component, and a support sheet 2 which is provided on at least one side of the film-shaped firing material, in which an adhesive force (a2) of the film-shaped firing material to the support sheet is smaller than an adhesive force (a1) of the film-shaped firing material to a semiconductor wafer, the adhesive force (a1) is 0.1 N/25 mm or greater, and the adhesive force (a2) is in a range of 0.1 N/25 mm to 0.5 N/25 mm.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (μm), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (μm), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

A filler-containing film that holds fillers and a fine solid in an insulating resin layer and a predetermined arrangement of the fillers is repeated as viewed in a plan view has a proportion of 300% or less where the proportion is a repeat pitch of the fillers after thermocompression bonding to that before thermocompression bonding during thermocompression bonding under a predetermined thermocompression bonding condition with the filler-containing film held between smooth surfaces. A method of producing the filler-containing film includes the steps of: forming an insulating resin layer on a release substrate; pushing fillers from a surface on a side opposite to the release substrate of the insulating resin layer; and layering the insulating resin layer containing the fillers pushed and another insulating resin layer. This filler-containing film suppresses disorder of arrangement of fillers during thermocompression bonding of the film to an article.

A filler-containing film that holds fillers and a fine solid in an insulating resin layer and a predetermined arrangement of the fillers is repeated as viewed in a plan view has a proportion of 300% or less where the proportion is a repeat pitch of the fillers after thermocompression bonding to that before thermocompression bonding during thermocompression bonding under a predetermined thermocompression bonding condition with the filler-containing film held between smooth surfaces. A method of producing the filler-containing film includes the steps of: forming an insulating resin layer on a release substrate; pushing fillers from a surface on a side opposite to the release substrate of the insulating resin layer; and layering the insulating resin layer containing the fillers pushed and another insulating resin layer. This filler-containing film suppresses disorder of arrangement of fillers during thermocompression bonding of the film to an article.