Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

A chip arrangement is provided. The chip arrangement may include a chip including a first main surface, wherein the first main surface includes an active area, a chip termination portion, and at least one contact pad. A first dielectric layer at least partially covers the chip termination portion and the active area, and at least partially exposes the at least one contact pad, and a second dielectric layer formed by atomic layer deposition over the first dielectric layer and over the at least one contact pad.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A die includes a semiconductor layer, an electrical contact on a first side of the semiconductor layer, a backside electrical contact layer on second side of the semiconductor layer. The die further includes a zinc layer over at least one of the electrical contact or the backside electrical contact layer of the die, and a conversion coating over the zinc layer. The conversion coating includes at least one of zirconium and vanadium. As part of an embedded die package including the die, at least a portion of the conversion coating may adjacent to an electrically insulating substrate of the embedded die package.

A die includes a semiconductor layer, an electrical contact on a first side of the semiconductor layer, a backside electrical contact layer on second side of the semiconductor layer. The die further includes a zinc layer over at least one of the electrical contact or the backside electrical contact layer of the die, and a conversion coating over the zinc layer. The conversion coating includes at least one of zirconium and vanadium. As part of an embedded die package including the die, at least a portion of the conversion coating may adjacent to an electrically insulating substrate of the embedded die package.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.