A light emitting device package according to an embodiment may include a first package body including first and second openings passing through the upper surface and lower surface thereof; a second package body disposed on the first package body and including a third opening passing through the upper surface and lower surface thereof; a light emitting device disposed in the third opening; a first resin disposed between the upper surface of the first package body and the light emitting device; and a second resin disposed in the third opening. According to the embodiment, the upper surface of the first package body may be coupled to the lower surface of the second package body, the first package body may include a recess recessed from the upper surface of the first package body to the lower surface of the first package body, the first resin may be disposed in the recess, the first resin and the second resin include materials different from each other, and the first resin may be in contact with the light emitting device and the second resin.

A light emitting device package according to an embodiment may include a first package body including first and second openings passing through the upper surface and lower surface thereof; a second package body disposed on the first package body and including a third opening passing through the upper surface and lower surface thereof; a light emitting device disposed in the third opening; a first resin disposed between the upper surface of the first package body and the light emitting device; and a second resin disposed in the third opening. According to the embodiment, the upper surface of the first package body may be coupled to the lower surface of the second package body, the first package body may include a recess recessed from the upper surface of the first package body to the lower surface of the first package body, the first resin may be disposed in the recess, the first resin and the second resin include materials different from each other, and the first resin may be in contact with the light emitting device and the second resin.

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

A semiconductor device is disclosed including one or more semiconductor dies mounted on substrate. Each semiconductor die may be formed with a ferromagnetic layer on a lower, inactive surface of the semiconductor die. The ferromagnetic layer pulls the semiconductor dies down against each other and the substrate during fabrication to prevent warping of the dies. The ferromagnetic layer also balances out a mismatch of coefficients of thermal expansion between layers of the dies, thus further preventing warping of the dies.

A semiconductor device is disclosed including one or more semiconductor dies mounted on substrate. Each semiconductor die may be formed with a ferromagnetic layer on a lower, inactive surface of the semiconductor die. The ferromagnetic layer pulls the semiconductor dies down against each other and the substrate during fabrication to prevent warping of the dies. The ferromagnetic layer also balances out a mismatch of coefficients of thermal expansion between layers of the dies, thus further preventing warping of the dies.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.