An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/° C.

An electronic-component-mounted module has an electronic component, a first silver-sintered bonding layer bonded on one surface of the electronic component, a circuit layer made of copper or copper alloy and bonded on the first silver-sintered bonding layer, and a ceramic substrate board bonded on the circuit layer, and further has an insulation circuit substrate board with smaller linear expansion coefficient than the electronic component, a second silver-sintered bonding layer bonded on the other surface of the electronic component, and a lead frame with smaller linear expansion coefficient than the electronic component bonded on the second silver-sintered bonding layer; and a difference in the linear expansion coefficient between the insulation circuit substrate board and the lead frame is not more than 5 ppm/° C.

A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the first stacked layer and the third stacked layer. The first stacked layer includes a first active layer. The second stacked layer includes a second active layer. The third stacked layer includes a third active layer. The bonding layer is disposed between the second stacked layer and the third stacked layer. The at least one etch stop layer is at least disposed between the first active layer and the second active layer. The plurality of electrodes are respectively electrically connected with the first stacked layer, the second stacked layer, and the third stacked layer. At least one electrode of the plurality of electrodes contacts the etch stop layer.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first via structure in a first dielectric layer, the first via structure including a first contact via surface. At least a portion of the first via structure is in direct contact with the first dielectric layer. The second semiconductor structure includes a second via structure in a second dielectric layer, the second via structure including a second contact via surface. At least a portion of the second via structure is in direct contact with the second dielectric layer. The first contact via surface is bonded with the second contact via surface. The second contact via surface and the first contact via surface have an overlapping interface in the vertical direction. A first barrier layer is formed at a non-overlapping interface in the first contact via surface and the second contact via surface. The first barrier layer contains a multi-component oxide.

A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first via structure in a first dielectric layer, the first via structure including a first contact via surface. At least a portion of the first via structure is in direct contact with the first dielectric layer. The second semiconductor structure includes a second via structure in a second dielectric layer, the second via structure including a second contact via surface. At least a portion of the second via structure is in direct contact with the second dielectric layer. The first contact via surface is bonded with the second contact via surface. The second contact via surface and the first contact via surface have an overlapping interface in the vertical direction. A first barrier layer is formed at a non-overlapping interface in the first contact via surface and the second contact via surface. The first barrier layer contains a multi-component oxide.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of “A1<B1<A1+200 seconds” and a relationship of “A1<2000 seconds”.