A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element 11 and an electrically conductive plate 123a are bonded to each other by a bonding layer 10 and the bonding layer 10 includes a metal nanoparticle sintered body 101 and a coupling agent 102 including an SH group.

A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.

A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.