A display device may include: a first power line and a second power line located on a substrate; a first electrode electrically connected to the first power line through a first contact portion; a second electrode electrically connected to the second power line through a second contact portion and spaced apart from the first electrode in a first direction; a light emitting element located on the first electrode and the second electrode; and a pixel circuit including a transistor and a storage capacitor, and electrically connected to the light emitting element. The first contact portion may include a plurality of first contact portions successively arranged in the first direction. In a plan view, the storage capacitor may have a shape extending in a second direction different from the first direction.

A display device includes a first electrode and a second electrode, spaced apart from each other; light emitting elements disposed between the first electrode and the second electrode; a first connection electrode electrically contacting the first electrode and first end portions of the light emitting elements; a second connection electrode electrically contacting the second electrode and second end portions of the light emitting elements; and a conductive pattern disposed between the first connection electrode and the second connection electrode. A first end portion of the conductive pattern electrically contacts the first connection electrode, and a second end portion of the conductive pattern electrically contacts the second connection electrode.

A display device includes a base layer; a pixel circuit layer disposed on the base layer, the pixel circuit layer including a first transistor; and an insulating layer overlapping the first transistor; a first electrode disposed on the pixel circuit layer, the first electrode electrically connected to the first transistor via a contact hole of the insulating layer; a cover layer disposed on the first electrode, the cover layer overlapping at least a portion of the first electrode; a light emitting element including a first end and a second end electrically connected to the first electrode; a second electrode disposed on the light emitting element, the second electrode electrically connected to the second end of the light emitting element; and a third electrode disposed on the cover layer, the third electrode electrically contacting at least a portion of the first electrode.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive structure comprising a first portion overlying the base structure and second portions vertically extending from the first portion and into the base structure, a stack structure overlying the doped semiconductive structure, cell pillar structures vertically extending through the stack structure and to the doped semiconductive structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The carrier structure and the second portions of the doped semiconductive structure are removed. The first portion of the doped semiconductive structure is then patterned to form at least one source structure coupled to the cell pillar structures. Devices and systems are also described.

A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive structure comprising a first portion overlying the base structure and second portions vertically extending from the first portion and into the base structure, a stack structure overlying the doped semiconductive structure, cell pillar structures vertically extending through the stack structure and to the doped semiconductive structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The carrier structure and the second portions of the doped semiconductive structure are removed. The first portion of the doped semiconductive structure is then patterned to form at least one source structure coupled to the cell pillar structures. Devices and systems are also described.

A display device includes: a substrate including a display area having a plurality of pixels, a pad area having a plurality of pads, and a non-display area including a fan-out area between the display area and the pad area; at least one first fan-out line in the fan-out area; at least one second fan-out line in the fan-out area and electrically disconnected from the first fan-out line; first, second, and third insulating layers sequentially arranged on the substrate; and a first conductive layer between the substrate and the first insulating layer, a second conductive layer on the second insulating layer, and a third conductive layer on the third insulating layer, wherein each of the first and second fan-out lines has a multi-layered stacking structure in which a first sub-line, a second sub-line, and a third sub-line provided in different layers are stacked.

A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

A display device may include a conductive pattern disposed on a substrate. A passivation layer may be disposed on the conductive pattern. A first shielding electrode and a second shielding electrode that may be disposed on the passivation layer may be spaced apart from each other. A first electrode may be disposed on the first shielding electrode. A second electrode may be disposed on the second shielding electrode. A light emitting element may be electrically connected between the first electrode and the second electrode. A first distance between the first shielding electrode and the second shielding electrode may be less than a second distance between the first electrode and the second electrode.