This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

This tin or tin alloy plating solution includes a soluble salt including at least a stannous salt (A), an acid selected from an organic acid and an inorganic acid or a salt thereof (B), a surfactant (C), benzalacetone (D), and a solvent (E), wherein the plating solution is used to form a pattern in which bump diameters are different from each other on a base material, an amount of the benzalacetone (D) is 0.05 g/L to 0.2 g/L, a mass ratio (C/D) of the surfactant (C) to the benzalacetone (D) is 10 to 200, and a mass ratio (E/D) of the solvent (E) to the benzalacetone (D) is 10 or more.

An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.