One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

One aspect of the invention is a method of manufacturing a connection structure, including disposing an adhesive layer between a first electronic member including a first substrate and a first electrode formed on the first substrate and a second electronic member including a second substrate and a second electrode formed on the second substrate, and pressure-bonding the first electronic member and the second electronic member via the adhesive layer such that the first electrode and the second electrode are electrically connected to each other, wherein the first electronic member further including an insulating layer formed on a side of the first electrode opposite to the first substrate, and the adhesive layer including: a first conductive particle being a dendritic conductive particle; and a second conductive particle being a conductive particle other than the first conductive particle and having a non-conductive core and a conductive layer provided on the core.

An electrically non-conducting film (109) comprising an oligomer comprising an arylene or heteroarylene repeating unit is disposed between a chip (105), e.g. a flip-chip, and a functional layer (101), e.g. a printed circuit board, electrically connected to the chip by electrically conducting interconnects (107). The oligomer may be crosslinked.

An electrically non-conducting film (109) comprising an oligomer comprising an arylene or heteroarylene repeating unit is disposed between a chip (105), e.g. a flip-chip, and a functional layer (101), e.g. a printed circuit board, electrically connected to the chip by electrically conducting interconnects (107). The oligomer may be crosslinked.

A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the deicing tape; the die bonding layer including a matrix resin, a thiol-group-containing compound, and conductive particles.

A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the deicing tape; the die bonding layer including a matrix resin, a thiol-group-containing compound, and conductive particles.

Provided in the present invention is a thermosetting sheet including a thermosetting resin, a thermoplastic resin, a volatile component, and conductive particles. The thermosetting sheet has an arithmetic average roughness Ra of 0.1 μm or more and 1.2 μm or less that is measured in a state before being cured.

Provided in the present invention is a thermosetting sheet including a thermosetting resin, a thermoplastic resin, a volatile component, and conductive particles. The thermosetting sheet has an arithmetic average roughness Ra of 0.1 μm or more and 1.2 μm or less that is measured in a state before being cured.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.