Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

An adhesive composition, containing an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and an inorganic filler (D), in which the inorganic filler (D) satisfies the condition (1) of (an average particle diameter (d50) is 0.1 to 3.5 μm) and condition (2) of (a ratio of a particle diameter at 90% cumulative distribution frequency (d90) to the average particle diameter (d50) is 5.0 or less), and a proportion of the inorganic filler (D) in a total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the inorganic filler (D) is 20 to 70% by volume; a film-like adhesive and a production method thereof; and a semiconductor package and a production method thereof.

An adhesive composition, containing an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and an inorganic filler (D), in which the inorganic filler (D) satisfies the condition (1) of (an average particle diameter (d50) is 0.1 to 3.5 μm) and condition (2) of (a ratio of a particle diameter at 90% cumulative distribution frequency (d90) to the average particle diameter (d50) is 5.0 or less), and a proportion of the inorganic filler (D) in a total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the inorganic filler (D) is 20 to 70% by volume; a film-like adhesive and a production method thereof; and a semiconductor package and a production method thereof.

In some embodiments, the present disclosure relates to a method including forming an interconnect structure over a substrate. A bond pad may be coupled to the interconnect structure, and a polymeric material may be deposited over the bond pad. In some embodiments, the method further includes performing a patterning process to remove a portion of the polymeric material to form an opening in the polymeric material. The opening directly overlies and exposes the bond pad. Further, the method includes a first cleaning process. The polymeric material is cured to form a polymeric protection layer, and a second cleaning process is performed.

In some embodiments, the present disclosure relates to a method including forming an interconnect structure over a substrate. A bond pad may be coupled to the interconnect structure, and a polymeric material may be deposited over the bond pad. In some embodiments, the method further includes performing a patterning process to remove a portion of the polymeric material to form an opening in the polymeric material. The opening directly overlies and exposes the bond pad. Further, the method includes a first cleaning process. The polymeric material is cured to form a polymeric protection layer, and a second cleaning process is performed.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.