Patent classifications
H01L2924/0625
Copper paste for joining, method for producing joined body, and method for producing semiconductor device
Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
Copper paste for joining, method for producing joined body, and method for producing semiconductor device
Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
ADHESIVE FILM FOR ELECTRIC DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE USING THE SAME
Provided are an adhesive film, and a method of fabricating a semiconductor package using the same. The adhesive film includes a thermoplastic resin containing a hydroxyl group, a thermosetting resin, and an anhydride.
ADHESIVE FILM FOR ELECTRIC DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE USING THE SAME
Provided are an adhesive film, and a method of fabricating a semiconductor package using the same. The adhesive film includes a thermoplastic resin containing a hydroxyl group, a thermosetting resin, and an anhydride.
SELECTIVELY CROSS-LINKED THERMAL INTERFACE MATERIALS
A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.
SELECTIVELY CROSS-LINKED THERMAL INTERFACE MATERIALS
A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.
Thermal Bonding Sheet and Thermal Bonding Sheet with Dicing Tape
A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.
Thermal Bonding Sheet and Thermal Bonding Sheet with Dicing Tape
A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5 C./sec from 80 C. to 300 C. under pressure of 10 MPa, and then held at 300 C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.
COPPER PASTE FOR JOINING, METHOD FOR PRODUCING JOINED BODY, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
COPPER PASTE FOR JOINING, METHOD FOR PRODUCING JOINED BODY, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.