A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

An integrated device package is disclosed. The package can include a carrier and an integrated device die having a front side and a back side. A mounting structure can serve to mount the back side of the integrated device die to the carrier. The mounting structure can comprise a first layer over the carrier and a second element between the back side of the integrated device die and the first layer. The first layer can comprise a first insulating material that adheres to the carrier, and the second element can comprise a second insulating material.

An integrated device package is disclosed. The package can include a carrier and an integrated device die having a front side and a back side. A mounting structure can serve to mount the back side of the integrated device die to the carrier. The mounting structure can comprise a first layer over the carrier and a second element between the back side of the integrated device die and the first layer. The first layer can comprise a first insulating material that adheres to the carrier, and the second element can comprise a second insulating material.

A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.