Patent classifications
H01L2924/0675
DISPLAY DEVICE INCLUDING AN ANISOTROPIC CONDUCTIVE FILM, AND MANUFACTURING METHOD OF THE ANISOTROPIC CONDUCTIVE FILM
A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.
CONDUCTIVE COMPOSITION AND ELECTRONIC PARTS USING THE SAME
A conductive composition, which can form bonded portions and is capable of maintaining a thickness of the bonded portions and bonding strength, and which includes: (A) silver fine particles having a number average particle diameter of primary particles of 40 nm to 400 nm, (B) a solvent, and (C) thermoplastic resin particles having a maximal value of an endothermic peak in a DSC chart, determined by a measurement using a differential scanning calorimeter, within a range of 80° C. to 170° C.
CONDUCTIVE COMPOSITION AND ELECTRONIC PARTS USING THE SAME
A conductive composition, which can form bonded portions and is capable of maintaining a thickness of the bonded portions and bonding strength, and which includes: (A) silver fine particles having a number average particle diameter of primary particles of 40 nm to 400 nm, (B) a solvent, and (C) thermoplastic resin particles having a maximal value of an endothermic peak in a DSC chart, determined by a measurement using a differential scanning calorimeter, within a range of 80° C. to 170° C.
INKJET ADHESIVE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT
Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.
INKJET ADHESIVE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT
Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.
COPPER PARTICLE, METHOD FOR PRODUCING COPPER PARTICLE, COPPER PASTE, SEMICONDUCTOR DEVICE, AND ELECTRICAL/ELECTRONIC COMPONENT
Copper particles coated with at least one kind of a nitrogen-containing compound selected from hydrazinoethanol and a hydrazinoethanol salt.
COPPER PARTICLE, METHOD FOR PRODUCING COPPER PARTICLE, COPPER PASTE, SEMICONDUCTOR DEVICE, AND ELECTRICAL/ELECTRONIC COMPONENT
Copper particles coated with at least one kind of a nitrogen-containing compound selected from hydrazinoethanol and a hydrazinoethanol salt.
LIGHT EMITTING DEVICE
A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.
LIGHT EMITTING DEVICE
A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.