The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

A thermosetting sheet according to the present invention includes: a thermosetting resin; a thermoplastic resin; and conductive particles. The conductive particles includes silver particles having an average particle size D.sub.50 of 0.01 μm or more and 10 μm or less, and having a circularity in cross section of 0.7 or more. The thermosetting sheet has a viscosity at 100° C. of 20 kPa.Math.s or more and 3000 kPa.Math.s or less.

A thermosetting sheet according to the present invention includes: a thermosetting resin; a thermoplastic resin; and conductive particles. The conductive particles includes silver particles having an average particle size D.sub.50 of 0.01 μm or more and 10 μm or less, and having a circularity in cross section of 0.7 or more. The thermosetting sheet has a viscosity at 100° C. of 20 kPa.Math.s or more and 3000 kPa.Math.s or less.

A semiconductor package includes a first semiconductor chip having a plurality of first through-electrodes and a plurality of first upper connection pads respectively connected to the plurality of first through-electrodes, where the plurality of first upper connection pads are on an upper surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip and having a plurality of second lower connection pads on a lower surface of the second semiconductor chip, and a plurality of connection members, each including a pillar and a conductive bump, the plurality of connection members electrically connecting respective ones of the first upper connection pads and the second lower connection pads to each other. Conductive bumps of adjacent connection members, among the plurality of connection members, are alternately disposed at different levels with respect to the upper surface of the first semiconductor chip.

A semiconductor package includes a first semiconductor chip having a plurality of first through-electrodes and a plurality of first upper connection pads respectively connected to the plurality of first through-electrodes, where the plurality of first upper connection pads are on an upper surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip and having a plurality of second lower connection pads on a lower surface of the second semiconductor chip, and a plurality of connection members, each including a pillar and a conductive bump, the plurality of connection members electrically connecting respective ones of the first upper connection pads and the second lower connection pads to each other. Conductive bumps of adjacent connection members, among the plurality of connection members, are alternately disposed at different levels with respect to the upper surface of the first semiconductor chip.

Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.

A light emitting device module includes a substrate, a plurality of light emitting devices mounted on the substrate, an adhesive layer interposed between the substrate and the light emitting device; and bonding wires electrically connecting the plurality of light emitting devices. The substrate includes an outer electrode in at least a partial region, and the adhesive layer has a non-conductive material.