The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 μm or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 40% by mass and less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

A film-shaped firing material (1) is provided, including first metal particles (10), second metal particles (20), and a binder component (30), in which the average particle diameter of the first metal particles (10) is 100 nm or less, and the maximum particle diameter thereof is 250 nm or less, the average particle diameter of the second metal particles (20) is in a range of 1000 to 7000 nm, the minimum particle diameter thereof is greater than 250 nm, and the maximum particle diameter thereof is 10000 nm or less, and the mass ratio of the first metal particles to the second metal particles is 0.1 or greater.

A film-shaped firing material (1) is provided, including first metal particles (10), second metal particles (20), and a binder component (30), in which the average particle diameter of the first metal particles (10) is 100 nm or less, and the maximum particle diameter thereof is 250 nm or less, the average particle diameter of the second metal particles (20) is in a range of 1000 to 7000 nm, the minimum particle diameter thereof is greater than 250 nm, and the maximum particle diameter thereof is 10000 nm or less, and the mass ratio of the first metal particles to the second metal particles is 0.1 or greater.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.