H01L2924/0685

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE POLYMER LINER
20230078105 · 2023-03-16 ·

The present disclosure relates to a method for forming a semiconductor device structure. The method includes forming a first semiconductor die and forming a second semiconductor die. The first semiconductor die includes a first metal layer, a first conductive via over the first metal layer, and a first conductive polymer liner surrounding the first conductive via. The second semiconductor die includes a second metal layer, a second conductive via over the second metal layer, and a second conductive polymer liner surrounding the second conductive via. The method also includes forming a conductive structure electrically connecting the first metal layer and the second metal layer by bonding the second semiconductor die to the first semiconductor die. The conductive structure is formed by the first conductive via, the first conductive polymer liner, the second conductive via, and the second conductive polymer liner.

ANISOTROPIC CONDUCTIVE FILM, MANUFACTURING METHOD THEREOF, AND CONNECTION STRUCTURE

An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

ANISOTROPIC CONDUCTIVE FILM, MANUFACTURING METHOD THEREOF, AND CONNECTION STRUCTURE

An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

Encapsulation resin composition, laminated sheet, cured product, semiconductor device, and method for fabricating semiconductor device

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

Encapsulation resin composition, laminated sheet, cured product, semiconductor device, and method for fabricating semiconductor device

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160° C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40° C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50° C. than the reaction start temperature.

INKJET ADHESIVE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

INKJET ADHESIVE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

METHOD FOR ATTACHING A FIRST CONNECTION PARTNER TO A SECOND CONNECTION PARTNER
20220310435 · 2022-09-29 ·

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

METHOD FOR ATTACHING A FIRST CONNECTION PARTNER TO A SECOND CONNECTION PARTNER
20220310435 · 2022-09-29 ·

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

METHOD OF MANUFACTURING SUBSTRATE LAYERED BODY AND LAYERED BODY

A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.