H01L2924/0685

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

A laser bonding apparatus, a method of bonding a plurality of semiconductor devices arranged on a main substrate of a workpiece, to the main substrate, and a method of manufacturing a semiconductor package, the laser bonding apparatus including a chamber having a transmissive window and in which a workpiece is accommodatable; a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber; and a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

A laser bonding apparatus, a method of bonding a plurality of semiconductor devices arranged on a main substrate of a workpiece, to the main substrate, and a method of manufacturing a semiconductor package, the laser bonding apparatus including a chamber having a transmissive window and in which a workpiece is accommodatable; a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber; and a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window.

PHYSICAL QUANTITY SENSOR AND SEMICONDUCTOR DEVICE
20200407216 · 2020-12-31 ·

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

PHYSICAL QUANTITY SENSOR AND SEMICONDUCTOR DEVICE
20200407216 · 2020-12-31 ·

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

Acrylic composition for encapsulation, sheet material, laminated sheet, cured object, semiconductor device, and process for producing semiconductor device

The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, and a thermal radical polymerization initiator.

Acrylic composition for encapsulation, sheet material, laminated sheet, cured object, semiconductor device, and process for producing semiconductor device

The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, and a thermal radical polymerization initiator.

ENCAPSULATION RESIN COMPOSITION, LAMINATED SHEET, CURED PRODUCT, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160 C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40 C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50 C. than the reaction start temperature.

ENCAPSULATION RESIN COMPOSITION, LAMINATED SHEET, CURED PRODUCT, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160 C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40 C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50 C. than the reaction start temperature.

Method for manufacturing anisotropic conductive adhesive including gapper and method for mounting component using gapper
10854572 · 2020-12-01 · ·

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Method for manufacturing anisotropic conductive adhesive including gapper and method for mounting component using gapper
10854572 · 2020-12-01 · ·

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.