An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α.sub.p≥α.sub.1>α.sub.2 in which α.sub.p, α.sub.1, and α.sub.2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α.sub.c≥15×10.sup.−6/° C. in which α.sub.c represents a composite coefficient of linear thermal expansion of the sealing layers, and E.sub.c≥5 GPa or more in which E.sub.c represents a composite Young's modulus of the sealing layers.

A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies α.sub.p≥α.sub.1>α.sub.2 in which α.sub.p, α.sub.1, and α.sub.2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, α.sub.c≥15×10.sup.−6/° C. in which α.sub.c represents a composite coefficient of linear thermal expansion of the sealing layers, and E.sub.c≥5 GPa or more in which E.sub.c represents a composite Young's modulus of the sealing layers.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

Provided is a semiconductor device including: a bed having a bed surface; a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end; a joint material provided between the bed surface and the bottom surface; a plate-like first wire having a first surface and provided such that the first surface faces the first end; a plate-like second wire having a second surface and provided such that the second surface faces the second end; a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface; and a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface.

An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.