A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

An anisotropic conductive film that can be produced in high productivity and can reduce a short circuit occurrence ratio has a first conductive particle layer in which conductive particles are dispersed at a predetermined depth in a film thickness direction, and a second conductive particle layer in which conductive particles are dispersed at a depth different from that in the first conductive particle layer. In the respective conductive particle layers, the closest distances between the adjacent conductive particles are 2 times or more the average particle diameters of the conductive particles.

An anisotropic conductive film that can be produced in high productivity and can reduce a short circuit occurrence ratio has a first conductive particle layer in which conductive particles are dispersed at a predetermined depth in a film thickness direction, and a second conductive particle layer in which conductive particles are dispersed at a depth different from that in the first conductive particle layer. In the respective conductive particle layers, the closest distances between the adjacent conductive particles are 2 times or more the average particle diameters of the conductive particles.

An anisotropic conductive film contains conductive particles and spacers. The spacers are arranged at a central part of the film in a width direction. The central part of the film in the width direction represents 20 to 80% of the overall width of the film. The height of the spacers in the thickness direction of the anisotropic conductive film is larger than 5 m and less than 75 m. Such an anisotropic conductive film has a layered structure having a first insulating adhesion layer and a second insulating adhesion layer, wherein the conductive particles are dispersed in the first insulating adhesion layer, and the spacers are regularly arranged on a surface of the first insulating adhesion layer on a side of the second insulating adhesion layer.

An anisotropic conductive film contains conductive particles and spacers. The spacers are arranged at a central part of the film in a width direction. The central part of the film in the width direction represents 20 to 80% of the overall width of the film. The height of the spacers in the thickness direction of the anisotropic conductive film is larger than 5 m and less than 75 m. Such an anisotropic conductive film has a layered structure having a first insulating adhesion layer and a second insulating adhesion layer, wherein the conductive particles are dispersed in the first insulating adhesion layer, and the spacers are regularly arranged on a surface of the first insulating adhesion layer on a side of the second insulating adhesion layer.

A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200 C. for 5 seconds, a curing reaction rate thereof is 80% or more.

A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200 C. for 5 seconds, a curing reaction rate thereof is 80% or more.