A thermosetting sheet according to the present invention includes a thermosetting resin and a thermoplastic resin, in which a thickness change rate when a temperature is changed from 25° C. to 200° C. is 0% or more and 10% or less.

A thermosetting sheet according to the present invention includes a thermosetting resin and a thermoplastic resin, in which a thickness change rate when a temperature is changed from 25° C. to 200° C. is 0% or more and 10% or less.

There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.

There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.

A semiconductor device includes: a metal sheet; an insulating pattern provided on the metal sheet; a power circuit pattern and a signal circuit pattern that are provided on the insulating pattern; a power semiconductor chip mounted on the power circuit pattern; and a control semiconductor chip that is mounted on the signal circuit pattern and controls the power semiconductor chip. The power semiconductor chip is bonded to the power circuit pattern with a first die bonding material comprised of copper, and the control semiconductor chip is bonded to the signal circuit pattern with a second die bonding material.

A semiconductor device includes: a metal sheet; an insulating pattern provided on the metal sheet; a power circuit pattern and a signal circuit pattern that are provided on the insulating pattern; a power semiconductor chip mounted on the power circuit pattern; and a control semiconductor chip that is mounted on the signal circuit pattern and controls the power semiconductor chip. The power semiconductor chip is bonded to the power circuit pattern with a first die bonding material comprised of copper, and the control semiconductor chip is bonded to the signal circuit pattern with a second die bonding material.

Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.

Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.