In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

An integrated circuit (IC) package, assembly tool and method for assembling an IC package are described herein. In a first example, an IC package is provided that includes a package substrate, at least a first integrated circuit (IC) die and a cover. The first integrated circuit (IC) die is mechanically and electrically coupled to the package substrate via solder connections. The cover is bonded to the package substrate. The cover encloses the first IC die and is laterally offset from a peripheral edge of the package substrate.

A package structure including a chip, an encapsulant, a first redistribution circuit structure, a second redistribution circuit structure, a conductive member, and a coded structure is provided. The encapsulant has a first encapsulating surface and a second encapsulating surface opposite thereto. The encapsulant covers the chip. The first redistribution circuit structure is disposed on the first encapsulating surface of the encapsulant. The second redistribution circuit structure is disposed on the second encapsulating surface of the encapsulant. The chip is electrically connected to the first redistribution circuit structure or the second redistribution circuit structure. The conductive member penetrates through the encapsulant to be electrically connected to the first redistribution circuit structure and the second redistribution circuit structure. The coded structure is disposed on the second redistribution circuit structure. The coded structure includes a readable coded pattern.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.

Methods for reducing the junction temperature between an IC chip and its lid by including metal spacers in the TIM layer and the resulting devices are disclosed. Embodiments include providing a substrate, including integrated circuit devices, having front and back sides; forming vertical spacers on the backside of the substrate; providing a plate parallel to and spaced from the backside of the substrate; and forming a TIM layer, surrounding the vertical spacers, between the backside of the substrate and the plate.

A three-dimensional interconnect structure having a top surface, a first coaxial conductor, and a shielded chamber is disclosed. The first coaxial conductor is filled with a solid dielectric medium. The first coaxial conductor has a segment that runs parallel to the top surface and a segment connects the first coaxial conductor to the top surface. Conductive pads on the top surface are adapted to receive a signal and couple that signal to the first coaxial conductor at the top surface. The shielded chamber contains a device connecting two conductors that are part of the three-dimensional interconnect structure to one another in that chamber. The shielded chamber is filled with the solid dielectric medium. The structure is a solid block composed of a mixture of metal structures interspersed with the solid dielectric medium.

A packaged RF device is provided that utilizes flexible circuit leads. The RF device includes at least one integrated circuit (IC) die configured to implement the RF device. The IC die is contained inside a package. In accordance with the embodiments described herein, a flexible circuit is implemented as a lead. Specifically, the flexible circuit lead is coupled to the at least one IC die inside the package and extends to outside the package, the flexible circuit lead thus providing an electrical connection to the at least one IC die inside the package.

A computing device includes a wafer having multiple layers, the wafer including a top layer and sublayers disposed below it, the sublayers including one or more memory devices. The computing device also includes two or more shaped retainer elements shaped to mate with and at least partially surround at least the top of the wafer and in electrical contact with one or more chips disposed on a top of the top layer and a holding device that mates with the retainer elements to provide at least power to the retaining elements. So arranged, the wafer may be cooled.

Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.