A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 10.sup.17 at/cm.sup.3. The electrically conductive layer may include doped diamond.

A light-emitting chip and a method for manufacturing the same are provided. Top surfaces of a first semiconductor layer (11), a first active layer (12), a second semiconductor layer (13) and a substrate (14) included in the light-emitting chip are located on a first horizontal plane, and bottom surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) included in the light-emitting chip are located on a second horizontal plane; and the top surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) serve as light-emitting surfaces.

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 μm, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

A display device may include including a first insulating reflective layer including a distributed Bragg reflector above a substrate, a first electrode and a second electrode above the first insulating reflective layer, a second insulating reflective layer including a distributed Bragg reflector above the first electrode and the second electrode, and a light emitting element above the second insulating reflective layer.

A display device includes a first electrode and a second electrode that are disposed on a substrate to be spaced apart from each other, a first insulating layer disposed on the first electrode and the second electrode, a light emitting element disposed on the first insulating layer, a first connection electrode in electrical contact with a first end of the light emitting element on the first insulating layer, and an organic layer disposed on the first connection electrode and surrounding the light emitting element.